无电极电光电场传感器灵敏度提高的研究

从提高灵敏度角度出发,理论上分析了无电极电光电场传感器电极长度与灵敏度和带宽的关系.通过比较不同结构的传输函数,验证平衡检测方式的可行性,最后选取使用平衡检测的三端口结构作为实验器件结构,从而为器件制作的可行性方案从理论上作了验证.     

开关型霍尔传感器的原理与工程实现

介绍了开关型霍尔传感器的工作原理，设计了适用于工程测量的具体线路，并分析了该线路的特点。     

Differential FBG sensor for temperature-compensated high-pressure (or displacement) measurement

A differential fiber Bragg grating (FBG) sensor with a free active element bulk-modulus for high-pressure (or displacement) measurement is presented. Based on the differential measurement method and an isosceles triangle cantilever structure, problems of cross-sensitivity and chirped signal in FBG sensor are improved both theoretically and experimentally. Preliminary experiments indicate that temperature-compensated measurement results agree well with the theoretical analysis. Displacement measurement sensitivity is 1.75 pm/μm, and the estimated pressure measurement resolution can reach 0.27 MPa in case the wavelength shift measurement resolution is 0.01 nm.     

硅色敏器件对复色光色差辨识能力的数值分析

对复色光的光谱功率分布和色敏器件光谱响应的实验曲线进行了函数拟合，采用Mathematica 4．2计算了具有不同峰值波长和半高宽的高斯分布的复色光在色敏器件中产生的电流比．计算结果表明，待测复色光的峰值波长和半高宽变化对两种典型的色敏器件的输出信号影响的权重比分别为100：1和10：1。权重比说明色敏器件的输出电流比随峰值波长和半高宽的变化非常灵敏，但两者权重不同，其中峰值波长的变化影响更为显著，是影响复色光颜色变化的主要因素．数值分析的结果表明，硅双结色敏器件对复色光色差有良好的辨识能力．两种器件权重比的差异说明了器件制作工艺与其辨识能力的关系，为器件合理设计提供了理论依据．     

A novel capacitive pressure sensor structure with high sensitivity and quasi-linear responseUne nouvelle structure de capteur de pression capacitif avec haute sensibilitée et réponse quasi-linéaire

This paper describes a new capacitive structure of pressure sensor to increase simultaneously the sensitivity and the linearity of the transducer. This structure contains two capacitors which change in response to pressure, but in opposite senses. To increase even more the sensitivity of each capacitor, the pressure sensitive diaphragm carries a central boss. The optimal position and the length of the boss are also calculated. To cite this article: A. Ettouhami et al., C. R. Mecanique 332 (2004).     

Novel optical film sensor design based on p-polarized reflectance

A new scheme of optical film sensor is presented. The sensor is based on p-polarized reflectance, consisting of a sensing coated substrate, is easily optimized for maximum sensitivity in different applications. The resolutions of refractive index n_f, extinction coefficient k_f and thickness h_f of the sensitive films are predicted to be 10⁻⁷, 10⁻⁵ and 10⁻³ nm, respectively. Experimentally, we selected the sol–gel derived SnO₂ films as gas-sensitive films and conducted preliminary gas-sensing test. The results indicate that novel optical film sensor scheme has higher sensitivity, and the detection sensitivity is available to 10⁻¹ ppm on the condition of optimum optical parameters and incident angle.     

磁光玻璃光纤的偏振特性及其在全光纤电流传感器中的应用

在磁光玻璃裸光纤偏振特性研究的基础上，研制磁光玻璃光纤，偏振特性及其在全光纤电流传感器中的应用。将采用模管法拉制成的磁光玻璃光纤置于亥姆霍兹线圈产生的磁场中，当线偏振光通过该光纤时，其偏振面旋转一定角度，把该角度转换成光信号的强度，然后再用仪器进行检测。通过对线偏振光偏振面在磁场中的偏振特性的测试与实验，提出用磁光玻璃光纤构成的全光纤电流传感器，可用于电流和磁场测试。     

Relative intensity noise of mode-locked fiber grating external cavity semiconductor lasers

The noise of hybrid soliton pulse source (HSPS) with linearly chirped Gaussian apodized fiber Bragg grating is analyzed by couple-mode equations including spontaneous emission noise when the HSPS is mode-locked. Relative intensity noise is calculated using numerical solutions of these equations. It is shown that transform limited pulses are generated over a wide tuning range around the fundamental mode-locking frequency with low spontaneous noise. However, a high noise level affects the operation of device, and therefore transform-limited pulses are not obtainable over a wide tuning range. It is also shown that noise is extremely sensitive to the RF and DC currents, linewidth enhancement factor, gain saturation parameter and spontaneous coupling factor.     

GaAs／AlGaAs发光二极管列阵场分布特性的电光测量

应用一种新颖的无损伤测量技术－连续波电光检测法（ＣＷＥＯＰ）对ＧａＡｓ／ＧａＡｌＡｓ单异质结发光管列阵电场分布进行了扫描测量。实验结果反映了器件内电流注入的方向和载流子扩展情况；通过比较各单元电场分布，反映器件发光均匀性。文中详细介绍了测量原理、实验装置和实验结果及讨论，最后用计算机对电场分布作了模拟计算并与实验结果进行了对照。     

镁掺杂对In2O3电导和气敏性能的影响

用共沉淀法制备了Mg2 + 掺杂的In2 O3 纳米粉 ,研究了镁掺杂对In2 O3 电导和气敏性能的影响 .结果表明 :MgO和In2 O3 间可形成有限固溶体In2 -xMgxO3 (0≤x≤ 0 .40 ) ;MgIn× 电离的空穴对材料导带电子的湮灭 ,使掺镁纳米粉的电导变得很小 ;n(Mg2 + )∶n(In3 + ) =1∶2共沉淀物于 90 0℃下热处理 4h ,用所得的纳米粉制作的传感器在 32 0～ 370℃下 ,对 45 μmol/LC2 H5OH的灵敏度达 10 2 .5 ,为相同浓度干扰气体Petrol的 12倍多 .